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| MPSA12 Discrete POWER & Signal Technologies MPSA12 C BE TO-92 NPN Darlington Transistor This device is designed for applications requiring extremely high current gain at currents to 1.0 A. Sourced from Process 05. See MPSA14 for characteristics. Absolute Maximum Ratings* Symbol VCES VCBO VEBO IC TJ, Tstg Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous TA = 25C unless otherwise noted Parameter Value 20 20 10 1.2 -55 to +150 Units V V V A C Operating and Storage Junction Temperature Range *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics Symbol PD RJC RJA TA = 25C unless otherwise noted Characteristic Total Device Dissipation Derate above 25C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Max MPSA12 625 5.0 83.3 200 Units mW mW/C C/W C/W (c) 1997 Fairchild Semiconductor Corporation MPSA12 NPN Darlington Transistor (continued) Electrical Characteristics Symbol Parameter TA = 25C unless otherwise noted Test Conditions Min Max Units OFF CHARACTERISTICS V(BR)CES ICBO ICES IEBO Collector-Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current Emitter Cutoff Current I C = 100 A, IE = 0 VCB = 15 V, IE = 0 VCE = 15 V, IC = 0 VEB = 10 V, IC = 0 20 100 100 100 V nA nA nA ON CHARACTERISTICS* hFE VCE(sat) VBE(on) DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter On Voltage VCE = 5.0 V, IC = 10 Ma IC = 10 mA, IB = 0.01 mA IC = 10 mA, VCE = 5.0 V 20,000 1.0 1.4 V V *Pulse Test: Pulse Width 300 s, Duty Cycle 2.0% |
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